Investigations on the sensing mechanisms in silicon nanowire Schottky-barrier field effect sensors
文献类型: 会议论文
第一作者: Larysa Baraban
作者: Larysa Baraban 1 ; J?rg Opitz 1 ; Thomas Mikolajik 2 ; Sebastian Prepl 1 ; Lotta R?mhildt 1 ; Walter M. Weber 2 ; Gianaurelio Cuniberti 1 ;
作者机构: 1.Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany
2.NaMLab GmbH, 01187 Dresden, Germany
关键词: Schottky-barrier;silicon nanowire;biosensor;field effect transistorSilicon
会议名称: International Meeting on Chemical Sensors
主办单位:
页码: 994-996
摘要: Surface functionalization of NiSi_2-Si-NiSi_2 nanowire heterostructures, acting as Schottky-junction field effect transistors (SB-FETs) represent a promising route for biosensor applications. Axially Ni-silicidized silicon nanowires exhibit a very sharp metalsemiconductor interface, thus forming a well defined and reproducible Schottky barrier. These barriers determine the current through the wire and can be changed by small molecules chemiadsorbed on the nanowire surface. We report that surface modifications can alter the polarity of the devices. This severe influence on the charge transport implies ultrahigh sensitivity for nanowire SB-FETs.
分类号: tp212.2-532
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